2N7000* 数据手册

2N7000, 2N7002, NDS7002A

数据手册规格

数据手册名称 2N7000, 2N7002, NDS7002A
文件大小 775.328 千字节
文件类型 pdf
页数 8

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技术规格

  • Manufacturer: ON Semiconductor
  • Series: -
  • Packaging: Bulk
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Base Part Number: 2N7000
  • detail: N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3

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